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| AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO5800E uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. RoHS compliant Features VDS (V) = 60V ID = 0.4A (VGS = 10V) RDS(ON) < 1.6 (VGS = 10V) RDS(ON) < 1.9 (VGS = 4.5V) ESD PROTECTED! SC-89-6 D1 D2 G2 S2 D1 G1 G2 S1 D2 G1 S1 S2 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A, F Pulsed Drain Current Power Dissipation A B Maximum 60 20 0.4 0.3 1.6 0.4 0.24 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 275 360 300 Max 330 450 350 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5800E Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=48V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, VGS=4.5V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=0.4A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=0.3A Forward Transconductance VDS=5V, ID=0.4A Diode Forward Voltage IS=0.1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 1.6 1.3 2.45 1.5 0.5 0.8 1 0.4 41 VGS=0V, VDS=30V, f=1MHz 9 6 39.2 VGS=10V, VDS=30V, RL=75, RGEN=3 IF=0.4A, dI/dt=100A/s, VGS=-9V 35.7 261 79 11.3 7.5 14 50 1.6 3 1.9 1.6 Min 60 1 5 1 100 2.5 Typ Max Units V A A nA V A S V A pF pF pF ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) tf trr Qrr Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=0.4A, dI/dt=100A/s, VGS=-9V A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev 0: Aug 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5800E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 6V 1.5 4.5V 1 4V 0.5 VGS=3.0V 3 5V 10V 0.8 0.6 ID(A) 0.4 0.2 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 3 VGS=4.5V 2.5 RDS(ON) () Normalized On-Resistance 2.6 2.2 1.8 1.4 1.0 0.6 0 0.5 1 1.5 -50 0 50 100 150 200 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 4 3.5 3 RDS(ON) () 2.5 2 1.5 1 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=0.4A 1.0E-01 125C IS (A) 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 0.0 0.4 0.8 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C -40C 1.0E+00 125C Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=0.3A VGS=10V ID=0.4A VGS(Volts) Figure 2: Transfer Characteristics 1 -40C VDS=5V 25C 125C ID (A) 0 2 VGS=10V 1.5 1 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5800E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0.0 0.3 0.6 0.9 1.2 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=30V ID=0.4A Capacitance (pF) 60 50 40 30 Coss 20 Crss 10 0 0 10 20 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics Ciss 10.00 TJ(Max)=150C, T A=25C 10s RDS(ON) limited 14 12 10 Power (W) 8 6 4 2 TJ(Max)=150C TA=25C 1.00 ID (Amps) 100s 1ms 10ms 0.1s 10s DC 0.10 1s 0.01 0.00 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=330C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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